N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

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FAIRCHILD

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description\nThis device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.\nOptimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenci • Fast switching\n• rDS(ON) = 0.0019Ω (Typ), VGS = 10V\n• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V\n• Qg (Typ) = 110nC, VGS = 5V\n• Qgd (Typ) = 31nC\n• CISS (Typ) = 11000pFApplications\n• DC/DC converters;

ONSEMI

安森美半导体

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-19500/228 • Fas

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PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)

文件：232.93 Kbytes 页数：3 Pages

MOSPEC

统懋

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switching for high efficien

文件：68.34 Kbytes 页数：2 Pages

PANJIT

強茂