N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：122.52 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

General Description\nThis device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.\nOptimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenci • Fast switching\n• rDS(ON) = 0.0019Ω (Typ), VGS = 10V\n• rDS(ON) = 0.0027Ω (Typ), VGS = 4.5V\n• Qg (Typ) = 110nC, VGS = 5V\n• Qgd (Typ) = 31nC\n• CISS (Typ) = 11000pFApplications\n• DC/DC converters;

ONSEMI

安森美半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：253.25 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

文件：189.04 Kbytes 页数：8 Pages

RFMD

威讯联合

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

文件：319.17 Kbytes 页数：8 Pages

RFMD

威讯联合