丝印：N03；Package：SOT-23；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

文件：133.15 Kbytes 页数：3 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

文件：259.769 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

文件：259.769 Kbytes 页数：8 Pages

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瑞萨

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：488.1 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0300P is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switc

文件：262.7 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0300P is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switc

文件：262.7 Kbytes 页数：8 Pages

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瑞萨

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：484.32 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：484.5 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0301N is a switching device which can be driven directly by a 4.0 V power source. The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

文件：261.6 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0301N is a switching device which can be driven directly by a 4.0 V power source. The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

文件：261.6 Kbytes 页数：8 Pages

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瑞萨