丝印：MZS；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

丝印：MZU；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

丝印：MZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：MZA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.90188 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：MZs；Package：SOT-143；Silicon N-Channel MOSFET Tetrode

文件：84.5 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：MZ4006GW；Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

文件：279.53 Kbytes 页数：12 Pages

恩XP

丝印：MZ4006GW；Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

文件：279.53 Kbytes 页数：12 Pages

恩XP

丝印：MZ5010G；Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

文件：432.58 Kbytes 页数：14 Pages

恩XP

丝印：MZ5010G；Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

文件：432.58 Kbytes 页数：14 Pages

恩XP

丝印：MZ5010G；Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

文件：432.58 Kbytes 页数：14 Pages

恩XP