型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:MZs;Package:SOT-143;Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode •For low noise, high gain controlled input stages up to 1 GHz •Operating voltage 5V •Integrated biasing network •Pb-free (RoHS compliant) package1) •Qualified according AEC Q101 文件:252.08 Kbytes 页数:5 Pages | Infineon 英飞凌 | Infineon | ||
丝印:MZS;Package:DO-214AC;400W Transient Voltage Suppressor (TVS) protection device Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual 文件:489.87 Kbytes 页数:6 Pages | Microsemi 美高森美 | Microsemi | ||
丝印:MZs;Package:SOT-143;Silicon N-Channel MOSFET Tetrode 文件:84.5 Kbytes 页数:8 Pages | Infineon 英飞凌 | Infineon | ||
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc??? Features (1) Attenuation effect against high voltage pulse noise (2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect 文件:147.02 Kbytes 页数:2 Pages | LAMBDA DENSEI-LAMBDA | LAMBDA | ||
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc??? Features (1) Attenuation effect against high voltage pulse noise (2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect 文件:147.02 Kbytes 页数:2 Pages | LAMBDA DENSEI-LAMBDA | LAMBDA | ||
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc??? Features (1) Attenuation effect against high voltage pulse noise (2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect 文件:147.02 Kbytes 页数:2 Pages | LAMBDA DENSEI-LAMBDA | LAMBDA | ||
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc??? Features (1) Attenuation effect against high voltage pulse noise (2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect 文件:147.02 Kbytes 页数:2 Pages | LAMBDA DENSEI-LAMBDA | LAMBDA | ||
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc??? Features (1) Attenuation effect against high voltage pulse noise (2) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect 文件:147.02 Kbytes 页数:2 Pages | LAMBDA DENSEI-LAMBDA | LAMBDA | ||
MZS | EM Single-Position Tooth Clutch 文件:110.22 Kbytes 页数:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
MZS | Plug-in Signal Conditioners M-UNIT 文件:117.47 Kbytes 页数:4 Pages | MSYSTEM 爱模 | MSYSTEM |
详细参数
- 型号:
MZS
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
Silicon N-Channel MOSFET Tetrode
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
BYD |
2016+ |
SOT23-5 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
BYD |
2430+ |
SOT23-5 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
INFINEON |
23+ |
SOT-143 |
7936 |
询价 | |||
Infineon |
24+ |
SOT-143 |
3600 |
绝对原装!现货热卖! |
询价 | ||
INFINEON |
24+ |
SOT-143SOT-23-4 |
21200 |
新进库存/原装 |
询价 | ||
INFINEON |
24+ |
SOT-143 |
15000 |
原装现货假一罚十 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
BYD |
24+ |
SMD |
30000 |
询价 | |||
CHINAXYJ |
23+ |
SMD |
9868 |
专做原装正品,假一罚百! |
询价 | ||
INFINEO |
25+ |
SOT143 |
12588 |
原装正品,自己库存 假一罚十 |
询价 |
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