丝印：MW7；Package：U-DFN2510-10；4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features  Clamping Voltage: 11.2V at 16A TLP  IEC 61000-4-2 (ESD): Air — ±8kV, Contact — ±8kV  IEC 61000-4-5 (Lightning): 3.5A (8/20μs)  4 Channels of ESD Protection  Ultra-low Channel Input Capacitance of 0.23pF Typical  TLP Dynamic Resistance: 0.55Ω  Totally Lead-Free & Fully RoHS

文件：360.97 Kbytes 页数：4 Pages

DIODES

美台半导体

USB2.0 High Speed ​​HUB Controller

Functional features: Fully compatible with USB2.0 standard; Supports 4 downstream USB2.0 ports; Upstream port supports high-speed (HS)/full-speed (FS) transmission; Downstream port supports high-speed (HS)/full-speed (FS)/low-speed (LS) transmission; Backward compatible with USB1.1 stand

文件：238.03 Kbytes 页数：14 Pages

MICOV

迈科微电子

RF LDMOS Wideband Integrated Power Amplifier

The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats. Features • Broadband, Single Matching Networ

文件：294.78 Kbytes 页数：13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application

文件：928.59 Kbytes 页数：32 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application

文件：928.59 Kbytes 页数：32 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. Final Application

文件：928.59 Kbytes 页数：32 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：927.29 Kbytes 页数：29 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.0309 Mbytes 页数：29 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：1.0309 Mbytes 页数：29 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

文件：927.29 Kbytes 页数：29 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体