丝印：MWS；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

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Microsemi

美高森美

20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

文件：147.71 Kbytes 页数：3 Pages

POWER-ONE

20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

文件：147.71 Kbytes 页数：3 Pages

POWER-ONE

20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

文件：147.71 Kbytes 页数：3 Pages

POWER-ONE

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件：78.51 Kbytes 页数：6 Pages

Microsemi

美高森美

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

文件：111.4 Kbytes 页数：5 Pages

Microsemi

美高森美

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件：78.51 Kbytes 页数：6 Pages

Microsemi

美高森美

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件：78.51 Kbytes 页数：6 Pages

Microsemi

美高森美

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

文件：111.4 Kbytes 页数：5 Pages

Microsemi

美高森美

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件：129.91 Kbytes 页数：4 Pages

Microsemi

美高森美