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MWS11

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件:78.51 Kbytes 页数:6 Pages

Microsemi

美高森美

MWS11-2

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

文件:111.4 Kbytes 页数:5 Pages

Microsemi

美高森美

MWS11GB11-G1

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件:78.51 Kbytes 页数:6 Pages

Microsemi

美高森美

MWS11GB11-S1

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

文件:78.51 Kbytes 页数:6 Pages

Microsemi

美高森美

MWS11-PH22-CS

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

文件:111.4 Kbytes 页数:5 Pages

Microsemi

美高森美

MWS11-PH41-CS

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件:129.91 Kbytes 页数:4 Pages

Microsemi

美高森美

MWS11-PH43-CS

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件:129.91 Kbytes 页数:4 Pages

Microsemi

美高森美

MWS11-PHXX-CS

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

文件:129.91 Kbytes 页数:4 Pages

Microsemi

美高森美

MWS11

InGaP HBT Gain Block

Microchip

微芯科技

详细参数

  • 型号:

    MWS11

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    InGaP HBT Gain Block

供应商型号品牌批号封装库存备注价格
RICO
24+
1939
询价
Essentra
22+
NA
21860
加我QQ或微信咨询更多详细信息,
询价
Richco
2022+
260
全新原装 货期两周
询价
RICHCO
25+
ROHS
880000
明嘉莱只做原装正品现货
询价
MMC
23+
1206
50000
全新原装正品现货,支持订货
询价
MMC
24+
NA/
9000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
KANG YANG HARDWARE ENTERPRISES
两年内
NA
2
实单价格可谈
询价
IPD
23+
17357
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
原厂原装
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
IPD
25+23+
33854
绝对原装正品全新进口深圳现货
询价
更多MWS11供应商 更新时间2025-10-13 13:30:00