RF LDMOS Wideband Integrated Power Amplifier

The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats. Features • Broadband, Single Matching Networ

文件：294.78 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

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RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc

文件：429.2 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF LDMOS Wideband Integrated Power Amplifier

文件：377.12 Kbytes 页数：13 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc

文件：429.2 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体