RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =

130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability

on CCDF.

Power Gain — 32 dB

Power Added Efficiency — 17.5

ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW

Output Power (3 dB Input Overdrive from Rated Pout)

• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts

CW Pout.

• Typical Pout @ 1 dB Compression Point 30 Watts CW

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 =

430 mA, Pout = 16 Watts Avg., 1805-1880 MHz

Power Gain — 33 dB

Power Added Efficiency — 35

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -77 dBc

EVM — 1.5 rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA,

Pout = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz

Power Gain — 31 dB

Power Added Efficiency — 50

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MW7IC2040GNR1属于RF/IF，射频/中频和 RFID > 射频放大器。恩智浦半导体公司制造生产的MW7IC2040GNR1射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。