Microwave Switching, Hermetically Sealed, DPDT

文件：299.63 Kbytes 页数：8 Pages

MACOM

USB 2.0 FLASH DISK CONTROLLER

FEATURS ■ USB 2.0 Interface compatible with Mass Storage Device Class - Integrated USB 2.0 PHY - Supports USB High Speed and Full Speed - Suspend and Resume operations ■ Most Widely FLASH Support - Supports all type of NAND Flash devices ST, Hynix, Samsung, Toshiba, Micron, Infineon and R

文件：401.62 Kbytes 页数：18 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Miniature Circuit Breaker Lockout - Pin Out Standard

Description: Design ● Safe and effective method for locking out miniature circuit breakers ● Require no tools to install! Easily installs with the aid of a push button ● Recommended to lock with lightweight Brady Compact Safety Padlocks, and can accept up to 9/32 shackle diameter ● Made of a

文件：332.19 Kbytes 页数：4 Pages

Brady

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA

文件：527.99 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件：542.96 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件：542.96 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance at 960 MHz: VDD = 2

文件：802.16 Kbytes 页数：20 Pages

恩XP

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件：542.96 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件：726.25 Kbytes 页数：20 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件：542.96 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体