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MW6S010N

RF Power Field Effect Transistors

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance at 960 MHz: VDD = 2

文件:802.16 Kbytes 页数:20 Pages

恩XP

恩XP

MW6S010NR1

RF Power Field Effect Transistors

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance at 960 MHz: VDD = 2

文件:802.16 Kbytes 页数:20 Pages

恩XP

恩XP

MW6S010NR1

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件:726.25 Kbytes 页数:20 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MW6S010NR1

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

文件:542.96 Kbytes 页数:16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MW609E

SSPA Replacement Kits

文件:171.2 Kbytes 页数:1 Pages

MIMIX

MW609E-1

SSPA Replacement Kits

文件:171.2 Kbytes 页数:1 Pages

MIMIX

MW62

Wide frequency range : [ 200.01 MHz ~ 800.0 MHz ]

文件:98.68 Kbytes 页数:1 Pages

MERCURY

玛居礼

MW6HP

Microwave Switching, Hermetically Sealed, DPDT

文件:299.63 Kbytes 页数:8 Pages

MACOM

MW6IC1940GNBR1

RF LDMOS Wideband Integrated Power Amplifier

文件:852.88 Kbytes 页数:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MW6IC1940GNBR1

RF LDMOS Wideband Integrated Power Amplifier

文件:852.88 Kbytes 页数:17 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

技术参数

  • 触点形式:

    两组转换

  • 最大切换电压:

    28V@DC

  • 最大切换电流:

    1A

  • 动作时间:

    2ms

  • 释放时间:

    1.5ms

  • 工作温度:

    -65℃~+125℃

供应商型号品牌批号封装库存备注价格
freescale
650
正品原装--自家现货-实单可谈
询价
FREESCALE
25+
NULL
116
全新原装进口,公司现货!
询价
FREESCALE
25+
高频管
18000
原厂直接发货进口原装
询价
FREESCALE
2016+
PLD-1.5
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
FREESCA
25+
TO-272
2266
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FSL
24+
原厂原封
58000
绝对原装现货代理销售
询价
原厂
23+
SMD
5000
原装正品,假一罚十
询价
FREESCALE
17+
PLD-1.5
6200
100%原装正品现货
询价
NSC
24+
40
询价
Freescale
24+
TO-270
3000
原装现货假一罚十
询价
更多MW6供应商 更新时间2025-11-29 16:20:00