N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

文件：500.87 Kbytes 页数：5 Pages

Motorola

摩托罗拉

N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

文件：500.87 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.36 Kbytes 页数：2 Pages

ISC

无锡固电

High voltage silicon diodes for micro-wave oven

FEATURES High reliability

文件：402.55 Kbytes 页数：2 Pages

YFWDIODE

佑风微

3 PHASE FULL WAVE BRIDGE RECTIFIER

3 PHASE FULL WAVE BRIDGE RECTIFIER(MTH200 - MTH800)

文件：105.05 Kbytes 页数：2 Pages

Microsemi

美高森美

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.12Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：315.77 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：292.76 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：292.54 Kbytes 页数：2 Pages

ISC

无锡固电