N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

文件：500.87 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.36 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FETs 15 AMPERES

TMOS POWER FETs 15 AMPERES\nrDS(on) = 0.3 OHM 350 and 400 VOLTSN-Channel Enhancement Mode silicon Gate TMOS

恩XP

Maximum Lead Temp

文件：89.99 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：170.71 Kbytes 页数：5 Pages

Motorola

摩托罗拉

N?묬hannel Power MOSFET

文件：148.35 Kbytes 页数：4 Pages

ONSEMI

安森美半导体