POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

文件：170.71 Kbytes 页数：5 Pages

Motorola

摩托罗拉

N?묬hannel Power MOSFET

文件：148.35 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.63 Kbytes 页数：2 Pages

ISC

无锡固电

N?묬hannel Power MOSFET

文件：148.35 Kbytes 页数：4 Pages

ONSEMI

安森美半导体