POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

文件：383.29 Kbytes 页数：5 Pages

Motorola

摩托罗拉

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.25 Kbytes 页数：2 Pages

ISC

无锡固电

POWER FIELD EFFECT TRANSISTOR

恩XP

恩智浦

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

文件：383.29 Kbytes 页数：5 Pages

Motorola

摩托罗拉

P-Channel 100 V (D-S) MOSFET

文件：967.25 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：289.21 Kbytes 页数：2 Pages

ISC

无锡固电