SiC 二极管

MSemitek

美浦森半导体

650V Silicon Carbide Diode

文件：271.02 Kbytes 页数：3 Pages

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美浦森半导体深圳市美浦森半导体有限公司

8A, 650V SiC Merged PIN Schottky Diode

FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATION

文件：348.5 Kbytes 页数：6 Pages

TSC

台湾半导体

8A, 650V SiC Merged PIN Schottky Diode

FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATIONS

文件：381.59 Kbytes 页数：6 Pages

TSC

台湾半导体