TSCDT08065G1规格书行情报价台湾半导体TSC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TSCDT08065G1	文件：381.59 Kbytes Page：6 Pages	8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATIONS 文件：381.59 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC
MSP08065G1	文件：271.02 Kbytes Page：3 Pages	650V Silicon Carbide Diode 文件：271.02 Kbytes 页数：3 Pages	MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美浦森半导体深圳市美浦森半导体有限公司	MAPLESMI
TSCDF08065G1	文件：348.5 Kbytes Page：6 Pages	8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATION 文件：348.5 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC
TSCS42A2X1NLGXZAX	文件：0 bytes Page：0 Pages	Tempo QFN-48	TEMPO 上传：深圳市金嘉锐电子有限公司	TEMPO
TSD180N10V	文件：0 bytes Page：0 Pages	ST 专营模块	ST 上传：谛辉(北京/上海/青岛 )电子科技有限公司	ST

更多TSCDT08065G1供应商更新时间2025-10-8 9:50:00