MSP08065G1数据手册原装现货美浦森半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MSP08065G1	文件：271.02 Kbytes Page：3 Pages	650V Silicon Carbide Diode 文件：271.02 Kbytes 页数：3 Pages	MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美浦森半导体深圳市美浦森半导体有限公司	MAPLESMI
MSP08065G1	文件：300 bytes Page：1 Pages	SiC 二极管	MSemitek 美浦森半导体	MSemitek
TSCDF08065G1	文件：348.5 Kbytes Page：6 Pages	8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATION 文件：348.5 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC
TSCDT08065G1	文件：381.59 Kbytes Page：6 Pages	8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free APPLICATIONS 文件：381.59 Kbytes 页数：6 Pages	TSC 台湾半导体	TSC

更多MSP08065G1供应商更新时间2025-10-7 11:00:00