Surface Mount Si-Bridge-Rectifiers Si-Br짰kengleichrichter f짰 die Oberfl짰henmontage

Nominal current 0.5 A Alternating input voltage 40...500 V Plastic case 3 x 3 x 1.5mm Weight approx. 0.04 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：119.58 Kbytes 页数：2 Pages

Diotec

德欧泰克

NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Case Material: Molded Plastic. UL Flammabi

文件：224.64 Kbytes 页数：3 Pages

MCC

NPN Silicon Plastic-Encapsulate Transistor

Features • SOT-23 Plastic-Encapsulate Transistors • Capable of 0.2Watts(Tamb=25°C) of Power Dissipation. • Collector-current 0.8A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking Code: Y11 • Case Material: Molded Plastic. UL Flammabi

文件：224.64 Kbytes 页数：3 Pages

MCC

SCHOTTKY BARRIER DIODE

[Fuji] Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：51 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SCHOTTKY BARRIER DIODE

Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：54.1 Kbytes 页数：3 Pages

Fuji

富士通

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

文件：88.72 Kbytes 页数：3 Pages

MCC

8 Amp Schottky Rectifier

8 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● High Current Capability ● VRRM 80 to 100 Volts

文件：94.22 Kbytes 页数：2 Pages

Microsemi

美高森美

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

文件：56.27 Kbytes 页数：3 Pages

CHENYI

商朗电子

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories is connected in common, and

文件：139.24 Kbytes 页数：19 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories isconnected in common, and th

文件：144.9 Kbytes 页数：19 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社