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MS81V04166A-XXTB

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166A is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories isconnected in common, and th

文件:144.9 Kbytes 页数:19 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS81V04166-XXTB

Dual FIFO (262,214 Words 횞 8 Bits) 횞 2

GENERAL DESCRIPTION The MS81V04166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k ×8-bit high-speed asynchronous read/write operation. The read clock of each of the 2Mb FIFO memories is connected in common, and

文件:139.24 Kbytes 页数:19 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS81V06160

(401,408-word 쨈 16-bit) FIFO memory

GENERAL DESCRIPTION The MS81V06160 is a 6Mb FIFO (First-In First-Out) memory designed for 401,408-words × 16-bit high-speed asynchronous read/write operation. The MS81V06160 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large memory , and is not de

文件:266.83 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS81V10160

(664,320-word x 16-bit) FIFO memory

GENERAL DESCRIPTION The MS81V10160 is a 10Mb FIFO (First-In First-Out) memory designed for 664,320-words × 16-bit high-speed asynchronous read/write operation. The MS81V10160 is best suited for a field memory for digital TVs or LCD panels which require high-speed, large memory , and is not desig

文件:266.76 Kbytes 页数:18 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS820

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

文件:88.72 Kbytes 页数:3 Pages

MCC

MS820

8Amp schottky barrier rectifier 20to100 volts

Features • Low Switching Noise • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability

文件:56.27 Kbytes 页数:3 Pages

CHENYI

商朗电子

MS82V16520

262,144-Word x 32-Bit x 2-Bank Synchronous Graphics RAM

DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words x 32 bits x 2 banks. This device can operate up to 143 MHz by using synchronous interface. In addition, it has 8-column Block Write function and Write per bit function which improves performance in

文件:846.58 Kbytes 页数:67 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS82V16520A

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

文件:1.22506 Mbytes 页数:40 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS82V16520A-7

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

文件:1.22506 Mbytes 页数:40 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

MS82V16520A-8

262,144-Word 횞 32-Bit 횞 2-Bank SGRAM

GENERAL DESCRIPTION The MS82V16520A is a 16-Mbit system clock synchronous dynamic random access memory. FEATURES • 262,144 words × 32 bits × 2 banks memory (1,024 rows × 256 columns × 32 bits × 2 banks) • Single 3.3 V ±0.3 V power supply • LVTTL compatible inputs and outputs • Programmable b

文件:1.22506 Mbytes 页数:40 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

技术参数

  • 角度:

    15°

  • 工作温度:

    -25℃~+125℃

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25+
100
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25+23+
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19436
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2447
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105000
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499
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23+
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3000
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MS
23+
DIP
50000
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Relmon瑞盟
26+
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86720
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22+
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23+
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89630
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MS
24+
DIP
60000
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询价
更多MS8供应商 更新时间2026-2-6 17:35:00