Gallium Arsenide PHEMT

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Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, I

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Gallium Arsenide PHEMT

文件：260.769 Kbytes 页数：11 Pages

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GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V

MRFG35003N6AT1 is Not Recommended for New Design.\nThe MRFG35003N6AT1 is designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ =180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain: 10 dBDrain Efficiency: 27%ACPR @ 5 MHz Offset: –42.5 dBc in 3.84 MHz Channel Bandwidth\n• 3 Watts P1dB;

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