Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80

文件：125.02 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

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Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：132.79 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT

OverviewReplaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. The MRFG35005MT1 is designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Dev \n•Typical W–CDMA Performance:  –42 dBc ACPR, 3.55 GHz, 12 Volts,\nIDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability)\nOutput Power: 450 mWatt\n\tPower Gain: 11 dB\n\tEfficiency: 25%\n\n\n•4.5 Watts P1dB @ 3.55 GHz\n\n•Excellent Phase Linearity and Group Delay Ch;

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Gallium Arsenide PHEMT RF Power Field Effect Transistor

文件：132.79 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体