Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT

OverviewMRFG35010R1 removed from active portfolio. Possible Replacement Part: MRFG35010AR1. \n•Typical W–CDMA Performance:  –42 dBc ACPR, 3.55 GHz, 12 Volts,\nIDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A \n@ 0.01% Probability)\nOutput Power: 1 Watt\n\tPower Gain: 10 dB\n\tEfficiency: 30%\n\n\n•10 Watts P1dB @ 3550 MHz\n\n•Excellent Phase Linearity and Group Delay Cha;

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