Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 20 W, 12 V WiMAX POWER FET GaAs PHEMT Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical WiMAX Performance: VDD =

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FREESCALEFreescale Semiconductor, Inc

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3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs pHEMT

Overview The MRFG35020AR1 is designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications.\nArchived content is no longer updated and is made availa \n•Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, \nPout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel\nBandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 11.5 dB\n\tDrain Efficiency: 22%\n\tRCE: –33 dB\n\tMeets ETSI Type G M;

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