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MRFG35020AR1中文资料3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs pHEMT数据手册恩XP规格书

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厂商型号

MRFG35020AR1

功能描述

3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs pHEMT

制造商

恩XP

中文名称

N智浦

数据手册

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更新时间

2025-9-29 10:36:00

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MRFG35020AR1规格书详情

描述 Description

Overview The MRFG35020AR1 is designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications.
Archived content is no longer updated and is made available for historical reference only.

特性 Features


•Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA,
Pout = 2 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain: 11.5 dB
\tDrain Efficiency: 22%
\tRCE: –33 dB
\tMeets ETSI Type G Mask

•20 Watts P1dB @ 3500 MHz, CW

•Supports up to 28 MHz Bandwidth OFDM Signals

•Internally Input Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Excellent Thermal Stability

•RoHS Compliant

•In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

技术参数

  • 型号:

    MRFG35020AR1

  • 功能描述:

    射频MOSFET电源晶体管 3.5GHZ 20W GAAS NI360 SH

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

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