RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：336.61 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

文件：491.39 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：336.61 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：336.61 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

文件：491.39 Kbytes 页数：8 Pages

Motorola

摩托罗拉

880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs

Overview The MRF9085LR3 and MRF9085LSR3 are designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equi \n•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA\nIS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\nOutput Power: 20 Watts\n\tPower Gain: 17.9 dB\n\tEfficiency: 28%\n\tAdjacent Channel Power\n\t\t   750 kHz:  –45.0 dBc @ 30 kHz BW\n\t\t   1.98 MHz:  –60.0 dBc @ 30 kHz BW\n;

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