RF Power Field Effect Transistors

文件：1.07325 Mbytes 页数：16 Pages

恩XP

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.01581 Mbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：1.07325 Mbytes 页数：16 Pages

恩XP

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.01581 Mbytes 页数：16 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：1.07325 Mbytes 页数：16 Pages

恩XP

2700-2900 MHz，320 W，30 V横向N信道宽带射频功率MOSFET

The MRF8P29300HR6 and MRF8P29300HSR6 are RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Qualified Up to a Maximum of 32 VDD Operation\n• Integrated ESD Protection\n• Designed for Push-Pull Operation\n• Greater Negative Gate-Source Voltage Range for Improved Class C Operatio;

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Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V

The MRF8P29300HR6 and MRF8P29300HSR6 are RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. • Characterized with Series Equivalent Large-Signal Impedance Parameters\n• Qualified Up to a Maximum of 32 VDD Operation\n• Designed for Push-Pull Operation\n• RoHS Compliant\n• These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.\;

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