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MRF7S21110H

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件:807.26 Kbytes 页数:15 Pages

恩XP

恩XP

MRF7S21110HR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件:807.26 Kbytes 页数:15 Pages

恩XP

恩XP

MRF7S21110HSR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件:807.26 Kbytes 页数:15 Pages

恩XP

恩XP

MRF7S21110HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:408.84 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF7S21110HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:408.84 Kbytes 页数:12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF7S21110H

2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier \napplications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. \nTypical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1,\n64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 17.3 dB\nDrain Efficiency: 3;

恩XP

恩XP

详细参数

  • 型号:

    MRF7S21110H

  • 功能描述:

    射频MOSFET电源晶体管 HV7 33W WCDMA NH780H

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
FREESCALE
2025+
TO-63
4000
原装进口价格优 请找坤融电子!
询价
FRESSCAL
24+
SMD
200
询价
FREESCALE
23+
TO-59
8510
原装正品代理渠道价格优势
询价
FREESCALE
24+
NI-780S
9600
原装现货,优势供应,支持实单!
询价
FREESCALE
26+
TO-63
30000
房间原装现货特价热卖,有单详谈
询价
FREESCALE
09+
高频管
5
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FREESCALE
23+
TO-63
89630
当天发货全新原装现货
询价
FREESCALE
25+
TO-63
880000
明嘉莱只做原装正品现货
询价
FREESCALE
23+
高频管
5
全新原装正品现货,支持订货
询价
FREESCALE
07+
TO-63
7
原装现货
询价
更多MRF7S21110H供应商 更新时间2026-7-22 11:04:00