MRF7S18170H

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

MRF7S18170H

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

MRF7S18170HR3

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

MRF7S18170HSR3

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

MRF7S18170HR3

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

MRF7S18170HSR3

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

MRF7S18170HR5

包装：卷带（TR） 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 1.81GHZ NI-880

MRF7S18170HSR3

包装：卷带（TR） 封装/外壳：NI-880S 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 1.81GHZ NI-880S

MRF7S18170HSR5

包装：卷带（TR） 封装/外壳：NI-880S 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 1.81GHZ NI-880S