RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

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RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

文件：478.5 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. • Typical Single--Ca

文件：1.01021 Mbytes 页数：18 Pages

恩XP

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

文件：478.5 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

文件：478.5 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

The MRF7S18170HR3 and MRF7S18170HSR3 are designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier \napplications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications. \nTypical Single–Carrier W–CDMA Performance: VDD = 28 Volts, \nIDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,\n64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal\nPAR = 7.5 dB @ 0.01% Probability on CCDF.\nPower Gain: 17.5 dB\nDrain Efficiency;

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