MRF6S21060N中文资料2110-2170 MHz, 14 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF6S21060NR1 and MRF6S21060NBR1 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio, WLL and TD-SCDMA applications.
Archived content is no longer updated and is made available for historical reference only.

特性 Features

•Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 15.5 dB
\tDrain Efficiency: 26%
\tIM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Bandwidth
\tACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Bandwidth

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation

•Integrated ESD Protection

•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•225°C Capable Plastic Package

•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.