MRF6S21050L中文资料2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

The MRF6S21050LR3 and MRF6S21050LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and
multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

特性 Features

Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 16 dB
\tDrain Efficiency: 27.7%
\tIM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
\tACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power

Characterized with Series Equivalent Large–Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 32 VDD Operation

Integrated ESD Protection

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.