MRF5S9080N中文资料869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

The MRF5S9080NR1 and MRF5S9080NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications

特性 Features

GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA,Pout = 80 Watts CW, Full Frequency Band (869–894 MHz or 921–960 MHz).Power Gain: 18.5 dBDrain Efficiency: 60%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869–894 MHz or 921–960 MHz).Power Gain: 19 dBDrain Efficiency: 42%Spectral Regrowth @ 400 kHz Offset = –63 dBcSpectral Regrowth @ 600 kHz Offset = –78 dBcEVM: 2.5% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power

• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.