MRF21180S中文资料2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET数据手册恩XP规格书

描述 Description

Overview MRF21180S removed from active portfolio.

特性 Features

•Typical 2-carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.

Output Power: 38 Watts (Avg.)
Power Gain: 12.1 dB
Efficiency: 22%
IM3: 37.5 dBc
ACPR: –41 dBc

•Internally Input and Output Matched, for Ease of Use
•High Gain, High Efficiency, and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power
•Excellent Thermal Stability
•Characterized with Series Equivalent Large–Signal Impedance Parameters