MRF21060中文资料RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs数据手册恩XP规格书

描述 Description

2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETsDesigned for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W- CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.
• Typical W- CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power ó 6.0 Watts
Power Gain ó 12.5 dB
Drain Efficiency ó 15%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.