RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs

Overview The MRF21045LR3 and MRF21045LSR3 are designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.\nArchived content is no longer \n•Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels \nmeasured over 3.84 MHz Bandwidth at f1 –5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.;

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