MRF18060AL中文资料1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs数据手册恩XP规格书

描述 Description

Overview The MRF18060ALR3 and MRF18060ALSR3 are designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB forPCN–PCS/cellular radio and WLL applications. Specified for GSM 1805 – 1880 MHz.Archived content is no longer updated and is made available for historical reference only.

特性 Features

•Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain: 13 dB @ 60 Watts
\tEfficiency — 45% @ 60 Watts

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.