MRF173数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.

特性 Features

·N–Channel Enhancement Mode MOSFET
·Low Thermal Resistance
·Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)
·Nitride Passivated Die for Enhanced Reliability
·Ruggedness Tested at Rated Output Power
·Excellent Thermal Stability, Suite for Class A Operation
·Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz

应用 Application

·Aerospace and Defense
·ISM