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9160

SimplePCIBridging

OXFORD

OXFORD electrical power

9160

Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG

ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG

BELDENBelden Inc.

百通电缆设计科技有限公司

9160

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

9160F

CountersunkTypeHRivets

HeycoHeyco.

海科海科(Heyco)

ACTF9160

RFFilter

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

BD9160FVM

1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ECS-9160

ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

ECS-9160P

ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO

VECOWVecow Co., Ltd.

超恩

EP9160

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

PCA

PCA Electronics, Inc.

FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYC9160R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
MPS
22+23+
QFN
39505
绝对原装正品全新进口深圳现货
询价
原装进口
2020+
QFN
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
MPS/美国芯源
2021+
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MPS优势现货
22+
QFN
28600
只做原装正品现货假一赔十一级代理
询价
MPS/美国芯源
22+
SMD
9600
原装现货,优势供应,支持实单!
询价
MPS优势现货
21+
QFN
20000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MPS
21+
QFN
10000
原装假一罚十!特价支持实单!一片起卖!
询价
MPS优势现货
1348+
QFN
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MPS优势现货
23+
QFN
12800
公司只有原装 欢迎来电咨询。
询价
MPS优势现货
QFN
30000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
更多MP9160GQ-Z供应商 更新时间2024-6-23 16:50:00