首页 >MP9160GQ-Z>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SimplePCIBridging | OXFORD OXFORD electrical power | OXFORD | ||
Electronic,8Pr#22SolTC,PVCIns,PVCJkt,CMG ProductDescription Electronic,8Pair22AWG(Solid)TinnedCopper,PVCInsulation,PVCOuterJacket,CMG | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
CountersunkTypeHRivets | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
RFFilter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
1chDC竊뢈CConverterControllerICwithBuilt-inSynchronousRectifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
ECS-9100,2GigELAN,4GigELANSwitchw/PoE,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
ECS-9100,2GigELAN,4GigELANSwitchw/LANBypass,2SSDTray,8USB3.0,4COM,3SIM,16GPIO | VECOWVecow Co., Ltd. 超恩 | VECOW | ||
SMD28PinPassiveDelayLines SMD28PinPassiveDelayLines | PCA PCA Electronics, Inc. | PCA | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MPS |
22+23+ |
QFN |
39505 |
绝对原装正品全新进口深圳现货 |
询价 | ||
原装进口 |
2020+ |
QFN |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MPS/美国芯源 |
2021+ |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MPS优势现货 |
22+ |
QFN |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
MPS/美国芯源 |
22+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
MPS优势现货 |
21+ |
QFN |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MPS |
21+ |
QFN |
10000 |
原装假一罚十!特价支持实单!一片起卖! |
询价 | ||
MPS优势现货 |
1348+ |
QFN |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
MPS优势现货 |
23+ |
QFN |
12800 |
公司只有原装 欢迎来电咨询。 |
询价 | ||
MPS优势现货 |
QFN |
30000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |
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