MPS2907A

PNP (GENERAL PURPOSE TRANSISTOR)

GENERALPURPOSETRANSISTOR •Collector-EitterVoltage:VCEO=60V •CollectorDissipation:Pc(max)=625mW

MPS2907A

SMALL SIGNAL TRANSISTORS (PNP)

FEATURES ♦PNPSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Onspecialrequest,thistransistorisalsomanufacturedinthepinconfigurationTO-18. ♦ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT2907A.

MPS2907A

TO-92 PLASTIC ENCAPSULATE TRANSISTORS

FEATURES Powerdissipation PCM:0.625W(Tamb=25°C) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

MPS2907A

PNP General Purpose Transistors

PNPGeneralPurposeTransistors

MPS2907A

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ComplementaryNPNTypeavailable(MPS2222A)

MPS2907A

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheMPS2907Aisdesignedforgeneralpurposeamplifierandhighspeed,medium-powerswitchingapplications. Features •LowCollectorSaturationvoltage. •HighSpeedSwitching. •ForComplementaryUsewithNPNTypeMPS2222A.

MPS2907A

PNP Silicon Plastic-Encapsulate Transistor

Features •Capableof0.625WattsofPowerDissipation. •Collector-current-0.6A •Collector-baseVoltage-60V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:MPS2907/MPS2907A •LeadFr

MPS2907A

General Purpose Transistor

FEATURES .EpitaxialPlanarDieConstruction .ComplementaryNPNTypeAvailable(MPS2222A) .IdealforMediumPowerAmplificationandSwitching

MPS2907A

General Purpose Transistors

GeneralPurposeTransistors PNPSilicon

MPS2907A

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

GeneralPurposeTransistors