MPSA06

NPN - High Current Transistor Chip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize22x22MILS DieThickness7.1MILS BaseBondingPadArea5.7x3.9MILS EmitterBondingPadArea5.3x3.9MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAu-18,000Å

MPSA06

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features VCEO Applications Generalpurposeamplifier.

MPSA06

NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS

NPN/PNPSILICONPLANAREPITAXIALTRANSISTORS AmplifierTransistors

MPSA06

General Purpose NPN Transistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

MPSA06

Amplifier Transistors

AmplifierTransistors VoltageandCurrentareNegativeforPNPTransistors

MPSA06

丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Poweramplifier

MPSA06

NPN general purpose transistor

DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplement:MPSA56. FEATURES •Lowcurrent(max.500mA) •Lowvoltage(max.80V). APPLICATIONS •Generalpurposeswitchingandamplification.

PHI

MPSA06

NPN SMALL SIGNAL TRANSISTOR

Features EpitaxialPlanarDieConstruction HighTransitionFrequency RecommendedforDriverandLow-PowerOutputStages

MPSA06

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *80VoltVCEO *Gainof50atIC=100mA

MPSA06

NPN General Purpose Amplifier

Features •Thisdeviceisdesignedforgeneral-purposeamplifierapplicationsatcollectorcurrentsto300mA. •Sourcedfromprocess12.