丝印：MPSA06；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power amplifier

文件：1.043099 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

NPN Silicon Epitaxial Planar Transistor

PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications

文件：299.97 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

TO-92 Transistor (NPN)

Features ◇ Power amplifier

文件：844.22 Kbytes 页数：3 Pages

TGS

NPN SMALL SIGNAL TRANSISTOR

Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages

文件：151.83 Kbytes 页数：1 Pages

TRSYS

Transys Electronics

Amplifier Transistors

Amplifier Transistors Voltage and current are negative for PNP transistors

文件：239.87 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN Silicon Transistor

Feature: •NPN Silicon Planar Epitaxial RF Transistor

文件：199.55 Kbytes 页数：2 Pages

MULTICOMP

易络盟

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: MPSA05: 60 V MPSA06: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.3 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features VCEO Applications General purpose amplifier.

文件：879.86 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：482.53 Kbytes 页数：2 Pages

CENTRAL

General Purpose Si-Epitaxial PlanarTransistors

General Purpose Si-Epitaxial PlanarTransistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

文件：107.46 Kbytes 页数：2 Pages

DIOTEC

德欧泰克