MMST2907

PNP Medium Power Transistor (Switching)

Features 1)BVCEO

MMST2907

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-60V •IC=-600mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMST2222A •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

MMST2907

Plastic-Encapsulate Transistors

MMST2907A

Marking：R2F；Package：SOT-346；PNP Medium Power Transistor (Switching)

Features 1)BVCEO

MMST2907A

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-60V •IC=-600mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMST2222A •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

MMST2907A

Marking：K3F；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

PNPSiliconEpitaxialPlanarTransistor FEATURES ●Powerdissipation.(PC=200mW) ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeMMST2222A. APPLICATIONS ●Generalpurposeapplication.

MMST2907A

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES •Epitaxialplanardieconstruction •ComplementaryPNPTypeavailable(MMST2222A)

MMST2907A

Marking：K3F；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMST2222A)

MMST2907A

PNP Plastic-Encapsulate Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •Powerdissipation:200mW(Tamb=25°C) •Collectorcurrent:-0.6A •MarkingCode:K3F •OperatingandStoragejunctiontemperaturerange -55°Cto+150°C •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCo

MMST2907A

Plastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMST2222A)