Indium Gallium Phosphorus HBT

Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. • 26.5 dBm P1dB @ 2450 MHz • Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) • High Gain, High Efficiency and High Linearity • EVM = 3 Typ @ Pout = +1

文件：468.49 Kbytes 页数：12 Pages

恩XP

Indium Gallium Phosphorus HBT

Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. • 26.5 dBm P1dB @ 2450 MHz • Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) • High Gain, High Efficiency and High Linearity • EVM = 3 Typ @ Pout = +1

文件：468.49 Kbytes 页数：12 Pages

恩XP

Indium Gallium Phosphorus HBT - WLAN Power Amplifier

Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. • 26.5 dBm P1dB @ 2450 MHz • Power Gain: 27.5 dB Typ (@ f = 2450 M

文件：172.41 Kbytes 页数：12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1200V 25A Six-Pack Module

PRODUCT FEATURES □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included □ Free wheeling diodes with fast and soft reverse recovery □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast

文件：1.14248 Mbytes 页数：6 Pages

MACMIC

宏微科技

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is des igned for a broad range of C lass A, small--signal, high linearity, general purpose applications. It is

文件：297.03 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：388.72 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：493.8 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：340.26 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Heterojunction Bipolar Transistor Technology (InGaP HBT)

40-3600 MHz, 20 dB 21 dBm InGaP HBT Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applicatio

文件：208.85 Kbytes 页数：16 Pages

Motorola

摩托罗拉

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：340.26 Kbytes 页数：16 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体