METALLIZED POLYESTER FILM CAPACITORS

文件：79.65 Kbytes 页数：4 Pages

Rubycon

红宝石

POWERLUX IGBT

This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic

文件：135.03 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：181.51 Kbytes 页数：9 Pages

恩XP

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：139.03 Kbytes 页数：9 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：312.51 Kbytes 页数：8 Pages

Motorola

摩托罗拉

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：139.47 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：139.47 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

650V 100A Three Level Inverter Module

PRODUCT FEATURES □ Temperature sense included □ Free wheeling diodes with fast and soft reverse recovery □ 650V IGBT CHIP(Trench+Field Stop technology) □ Low switching losses and short tail current □ Low saturation voltage and positive temperature coefficient APPLICATIONS □ Solar Applicat

文件：1.18124 Mbytes 页数：6 Pages

MACMIC

宏微科技

GALLIUM ARSENIDE CATV INTEGRATED AMPLIFIER MODULE

Description • 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler Amplifier Module Features • Specified for 79–, 112– and 132–Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built–in Input Diode Protection • GaAs FET Transistor Technology • U

文件：365.29 Kbytes 页数：8 Pages

Motorola

摩托罗拉

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply, 40 to 870 MHz, CATV Integrated Forward Power Doubler Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Technology • U

文件：147.1 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体