丝印：1M；Package：SOT-23；NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05.

文件：605.7 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage

文件：123.64 Kbytes 页数：4 Pages

INFINEON

英飞凌

DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW

文件：92.73 Kbytes 页数：3 Pages

UTC

友顺

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.

文件：65.95 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：K2D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig

文件：47.79 Kbytes 页数：2 Pages

DIODES

美台半导体

NPN Darlington Amplifier Transistor

Features • Operating And Storage Temperatures –55°C to +150°C • RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Halogen free available upon request by adding suffix -HF • Marking: MMBTA13 ---K2D; MMBTA14 ---K3D • Lead Free Finish/RoHS Co

文件：166.84 Kbytes 页数：4 Pages

MCC

NPN Transistors Darlington Amplifier

NPN Transistors Darlington Amplifier

文件：208.4 Kbytes 页数：5 Pages

WEITRON

丝印：K2D；Package：SOT-23；NPN General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available (MMBTA63/MMBTA64). ● High current gain APPLICATIONS ● Ideal for medium power amplification and switching.

文件：143.2 Kbytes 页数：3 Pages

BILIN

银河微电

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Darlington Amplifier

文件：389.44 Kbytes 页数：3 Pages

DAYA

大亚电器

TRANSISTOR (NPN)

FEATURES • Darlington Amplifier

文件：687.14 Kbytes 页数：3 Pages

HTSEMI

金誉半导体