MMBT5551Q中文资料NPN, 160V, 0.6A, SOT23数据手册Diodes规格书

描述 Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

特性 Features

•BVCEO > 160V
•Ideal for Low Power Amplification and Switching
•Complementary PNP Type Available (MMBT5401)
•Totally Lead-Free & Fully RoHS compliant 
•Halogen- and Antimony-Free. “Green” Device 
•The MMBT5551Q is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF16949certified facilities.https://www.diodes.com/quality/product-definitions/

简介

MMBT5551Q属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MMBT5551Q晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。