High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon Features • Pb−Free Packages are Available

文件：199.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon

文件：165.54 Kbytes 页数：4 Pages

LRC

乐山无线电

High Voltage Transistors

High Voltage Transistors NPN Silicon

文件：199.8 Kbytes 页数：6 Pages

Motorola

摩托罗拉

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：38.95 Kbytes 页数：1 Pages

AVICTEK

NPN EPITAXIAL PLANAR TRANSISTOR

Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.

文件：41.04 Kbytes 页数：3 Pages

TGS

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR ● Collector Dissipation:Pc-225mW(Ta=25°) ● Collector-Emiller Voltage: VCEO=160V

文件：153.2 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

High Voltage Transistors

文件：97.56 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High Voltage Transistors

High Voltage Transistors\nNPN Silicon

恩XP

恩智浦

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)FEATURES\n   Power dissipation\n      PCM: 0.3 W (Tamb=25℃)\n   Collector current\n      ICM: 0.6 A\n   Collector-base voltage\n      V(BR)CBO: 180 V\n   Operating and storage junction temperature range\n      TJ, Tstg: -55℃ to +150℃    Power dissipation\n      PCM: 0.3 W (Tamb=25℃)\n   Collector current\n      ICM: 0.6 A\n   Collector-base voltage\n      V(BR)CBO: 180 V\n   Operating and storage junction temperature range\n      TJ, Tstg: -55℃ to +150℃;

AVICTEK

贴片晶体管

Nanjing

南晶电子