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MMBT5401L

High Voltage Transistor

High Voltage Transistor PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件:139.08 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT5401L-AE3-R

HIGH VOLTAGE SWITCHING TRANSISTOR

FEATURES * Collector-Emitter Voltage: VCEO=-150V * Collector Dissipation: Pc(max)=350mW * High current gain

文件:84.47 Kbytes 页数:4 Pages

UTC

友顺

MMBT5401LT1

SOT-23 Plastic-Encapsulate Transistors

文件:154.92 Kbytes 页数:2 Pages

WINNERJOIN

永而佳

MMBT5401LT1

High Voltage Transistor

FEATURE ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件:330.96 Kbytes 页数:5 Pages

WILLAS

威伦电子

MMBT5401LT1

High Voltage Transistor(PNP Silicon)

High Voltage Transistor PNP Silicon

文件:164.83 Kbytes 页数:4 Pages

LRC

乐山无线电

MMBT5401LT1

丝印:2L;Package:SOT-23;High Voltage Transistor

High Voltage Transistor PNP Silicon

文件:189.34 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MMBT5401LT1

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件:44.6 Kbytes 页数:1 Pages

AVICTEK

MMBT5401LT1

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1.

文件:40.92 Kbytes 页数:3 Pages

TGS

MMBT5401LT1

High Voltage Transistor(PNP Silicon)

High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available

文件:135.89 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MMBT5401LT1G

High Voltage Transistor(PNP Silicon)

High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available

文件:135.89 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.5

  • IC Cont. (A):

    0.5

  • VCEO Min (V):

    150

  • VCBO (V):

    160

  • VEBO (V):

    5

  • VBE(sat) (V):

    1

  • hFE Min:

    60

  • hFE Max:

    240

  • fT Min (MHz):

    100

  • PTM Max (W):

    0.225

  • Package Type:

    SOT-23-3

供应商型号品牌批号封装库存备注价格
UTC
24+
SOT-23
12000
原装现货假一罚十
询价
UTC
24+
SOT-23
65200
一级代理/放心采购
询价
UTC/友顺
2447
SOT-23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
UTC/友顺
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
UTC/友顺
23+
SOT-23
89630
当天发货全新原装现货
询价
UTC/友顺
24+
NA/
12000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ON
22+
TO-220-3
50000
ON二三极管全系列在售
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
询价
ONSEMI
25+
N/A
16452
原装现货17377264928微信同号
询价
更多MMBT5401L供应商 更新时间2025-10-12 8:01:00