MMBT3906

-200 mA, -40 V PNP Plastic Encapsulated Transistor

FEATURES ♦CollectorcurrentcapabilityIC=-200mA ♦Collector-emittervoltageVCEO=-40V. APPLICATION ♦Generalswitchingandamplification.

MMBT3906

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

Voltage--40VoltsPowerDissipation-300mWatt FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMBT3904) ●IdealforMediumPowerAmplificationandSwitching

MMBT3906

40V PNP SMALL SIGNAL TRANSISTOR

Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryNPNType:MMBT3904 ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig

MMBT3906

PNP Switching Transistor

■FEATURES PNPSwitchingTransistor

MMBT3906

PNP General Purpose Amplifier

Features •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •RoHScompliantpackage Application •Generalswitchingandamplification

MMBT3906

As complementary type the PNP transistor MMBT3904 is recommended

FEATURES AscomplementarytypethePNPtransistorMMBT3904isrecommended Epitaxialplanardieconstruction

MMBT3906

丝印：2A；Package：SOT-23；PNP Transistors

Features ●ComplementarytoMMBT3904 ●Marking:2A

MMBT3906

Plastic-Encapsulate Transistors

FEATURES AscomplementarytypethePNPtransistorMMBT3904isrecommended Epitaxialplanardieconstruction

MMBT3906

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction

MMBT3906

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighDCCurrentGain,LowCollectortoEmitterSaturationVoltage. Applications Generalpurposeamplifierandswitching.