型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MMBT3906 | 200mW PNP Bipolar Transistors Feature * Power Dissipation Pcm= 200 mW (Ta=25C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 40V * Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C * Marking 2A 文件:96.32 Kbytes 页数:1 Pages | FCI 富加宜 | FCI | |
MMBT3906 | PNP General Purpose Amplifier Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 300mWatts of Power Dissipation • Marking:2A 文件:96.48 Kbytes 页数:4 Pages | MCC | MCC | |
MMBT3906 | 30.3 Watts PNP Plastic-Encapsulate Transistors FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free) 文件:303.26 Kbytes 页数:3 Pages | TSC 台湾半导体 | TSC | |
MMBT3906 | General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon 文件:300.37 Kbytes 页数:6 Pages | WEITRON | WEITRON | |
MMBT3906 | PNP GENERAL PURPOSE AMPLIFIER
文件:659.29 Kbytes 页数:4 Pages | SUNMATE 森美特 | SUNMATE | |
MMBT3906 | 丝印:7B*;Package:SOT-23;PNP switching transistor DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. FEATURES • Collector current capability IC = −200 mA • Collector-emitter voltage VCEO = −40 V. APPLICATIONS • General switching and amplification. 文件:151.9 Kbytes 页数:8 Pages | 恩XP | 恩XP | |
MMBT3906 | 丝印:2A;Package:SOT-23;PNP General Purpose Transistor FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT3904). ● Collector Current Capability ICM =-200mA. ● Low Voltage(Max:-40V). APPLICATIONS ● Ideal for medium power amplification and switching. 文件:279.99 Kbytes 页数:4 Pages | BILIN 银河微电 | BILIN | |
MMBT3906 | General Purpose Transistor (PNP) PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching 文件:123.82 Kbytes 页数:5 Pages | COMCHIP 典琦 | COMCHIP | |
MMBT3906 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● As complementary type, the NPN transistor MMBT3904 is Recommended ● Epitaxial planar die construction 文件:180.13 Kbytes 页数:3 Pages | DAYA 大亚电器 | DAYA | |
MMBT3906 | PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - -40 Volts Power Dissipation - 300 mWatt FEATURES ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT3904) ● Ideal for Medium Power Amplification and Switching 文件:2.24247 Mbytes 页数:5 Pages | DIOTECH | DIOTECH |
产品属性
- 产品编号:
MMBT3906
- 制造商:
Yangzhou Yangjie Electronic Technology Co.,Ltd
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
PNP
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
400mV @ 5mA,50mA
- 电流 - 集电极截止(最大值):
50nA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
100 @ 10mA,1V
- 频率 - 跃迁:
250MHz
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-236-3,SC-59,SOT-23-3
- 供应商器件封装:
SOT-23
- 描述:
TRANS PNP 40V 0.2A SOT23
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
2012 |
SOT23-3 |
104 |
全新原装 正品现货 |
询价 | ||
恩XP |
1816 |
SOT23 |
860000 |
正规渠道,只有全新原装! |
询价 | ||
CJ |
19+ |
SOT23 |
11000 |
询价 | |||
ON |
2024+ |
SOT23 |
50000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
2404+ |
SOT-23 |
3300 |
现货正品原装,假一赔十 |
询价 | ||
CJ |
24+ |
SOT-23 |
10000 |
只做现货 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
SOT-23 |
30000 |
只做正品原装现货 |
询价 | ||
STARSEA/CJ |
2450+ |
SOD/SMA/SOT |
9950 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEXPERIA/安世 |
25+ |
SOT-23 |
600000 |
NEXPERIA/安世全新特价MMBT3906即刻询购立享优惠#长期有排单订 |
询价 | ||
2015+ |
126 |
公司现货库存 |
询价 |
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