首页 >MMBT3906>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MMBT3906

200mW PNP Bipolar Transistors

Feature * Power Dissipation Pcm= 200 mW (Ta=25C) * Collector Current Icm=0.2A * Collector-base Voltage Vbr (cbo)= 40V * Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C * Marking 2A

文件:96.32 Kbytes 页数:1 Pages

FCI

富加宜

MMBT3906

PNP General Purpose Amplifier

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 300mWatts of Power Dissipation • Marking:2A

文件:96.48 Kbytes 页数:4 Pages

MCC

MMBT3906

30.3 Watts PNP Plastic-Encapsulate Transistors

FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

文件:303.26 Kbytes 页数:3 Pages

TSC

台湾半导体

MMBT3906

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon

文件:300.37 Kbytes 页数:6 Pages

WEITRON

MMBT3906

PNP GENERAL PURPOSE AMPLIFIER

文件:659.29 Kbytes 页数:4 Pages

SUNMATE

森美特

MMBT3906

丝印:7B*;Package:SOT-23;PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. FEATURES • Collector current capability IC = −200 mA • Collector-emitter voltage VCEO = −40 V. APPLICATIONS • General switching and amplification.

文件:151.9 Kbytes 页数:8 Pages

恩XP

恩XP

MMBT3906

丝印:2A;Package:SOT-23;PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMBT3904). ● Collector Current Capability ICM =-200mA. ● Low Voltage(Max:-40V). APPLICATIONS ● Ideal for medium power amplification and switching.

文件:279.99 Kbytes 页数:4 Pages

BILIN

银河微电

MMBT3906

General Purpose Transistor (PNP)

PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching

文件:123.82 Kbytes 页数:5 Pages

COMCHIP

典琦

MMBT3906

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● As complementary type, the NPN transistor MMBT3904 is Recommended ● Epitaxial planar die construction

文件:180.13 Kbytes 页数:3 Pages

DAYA

大亚电器

MMBT3906

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

Voltage - -40 Volts Power Dissipation - 300 mWatt FEATURES ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT3904) ● Ideal for Medium Power Amplification and Switching

文件:2.24247 Mbytes 页数:5 Pages

DIOTECH

产品属性

  • 产品编号:

    MMBT3906

  • 制造商:

    Yangzhou Yangjie Electronic Technology Co.,Ltd

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    400mV @ 5mA,50mA

  • 电流 - 集电极截止(最大值):

    50nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 10mA,1V

  • 频率 - 跃迁:

    250MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23

  • 描述:

    TRANS PNP 40V 0.2A SOT23

供应商型号品牌批号封装库存备注价格
ON
2012
SOT23-3
104
全新原装 正品现货
询价
恩XP
1816
SOT23
860000
正规渠道,只有全新原装!
询价
CJ
19+
SOT23
11000
询价
ON
2024+
SOT23
50000
原装正品
询价
FAIRCHILD/仙童
2404+
SOT-23
3300
现货正品原装,假一赔十
询价
CJ
24+
SOT-23
10000
只做现货
询价
FAIRCHILD/仙童
24+
SOT-23
30000
只做正品原装现货
询价
STARSEA/CJ
2450+
SOD/SMA/SOT
9950
只做原装正品假一赔十为客户做到零风险!!
询价
NEXPERIA/安世
25+
SOT-23
600000
NEXPERIA/安世全新特价MMBT3906即刻询购立享优惠#长期有排单订
询价
2015+
126
公司现货库存
询价
更多MMBT3906供应商 更新时间2025-10-11 16:00:00