MMBT3906

GENERAL PURPOSE APPLIATION

FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3904

MMBT3906

General Purpose Transistor PNP Silicon

GeneralPurposeTransistor PNPSilicon

MMBT3906

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

MMBT3906

30.3 Watts PNP Plastic-Encapsulate Transistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeans greencompound(halogen-free)

MMBT3906

Surface Mount Si-Epi-Planar Switching Transistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreel

MMBT3906

Marking：2A；Package：SOT-23；PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMBT3904). ●CollectorCurrentCapabilityICM=-200mA. ●LowVoltage(Max:-40V). APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBT3906

Marking：2A；Package：SOT-23；SMD General Purpose Transistor (PNP)

Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications •RoHScompliance

MMBT3906

PNP Silicon General Purpose Transistor

PNPSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypestheNPNtransistors MMBT3904isrecommended.

MMBT3906

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●Ascomplementarytype,theNPNtransistor MMBT3904isRecommended ●Epitaxialplanardieconstruction

MMBT3906

-200 mA, -40 V PNP Plastic Encapsulated Transistor

FEATURES ♦CollectorcurrentcapabilityIC=-200mA ♦Collector-emittervoltageVCEO=-40V. APPLICATION ♦Generalswitchingandamplification.