MMBT3906W

GeneralPurposeTransistor

FEATURES •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT3904W) •IdealforMediumPowerAmplificationandSwitching

MMBT3906W

PNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER150mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

MMBT3906W

PNPTransistor

■Features ●CollectorCurrentCapabilityIC=-0.2A ●CollectorEmitterVoltageVCEO=-40V ●ComplementarytoMMBT3904W)

MMBT3906W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifierandswitching.

MMBT3906W

PNPSiliconEpitaxialPlanarTransistor

MMBT3906WG

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon

MMBT3906WGH

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Leadfreeproduct Halogen-freetype

MMDT3906

DUALSURFACEMOUNTPNPTRANSISTORS

Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu

MMDT3906

DUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

MMDT3906

DualPNPSmallSignalSurfaceMountTransistor

FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification.